Title :
Integrated InP/GaInAs heterojunction bipolar photoreceiver
Author :
Chandrasekhar, S. ; Campbell, Joe C. ; Dentai, A.G. ; Joyner, Charles H. ; Qua, G.J. ; Gnauck, A.H. ; Feuer, Mark D.
Author_Institution :
AT&T Bell Labs., Homdel, NJ
fDate :
11/10/1988 12:00:00 AM
Abstract :
The authors report the first integrated photodetector-preamplifier circuit implemented with InP/GaInAs heterojunction bipolar transistors. The circuit consists of a three-terminal phototransistor, three bipolar transistors and three resistors. A receiver sensitivity of -26 dBm at 100 Mbit/s has been achieved
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; preamplifiers; receivers; InP-GaInAs; heterojunction bipolar transistors; integrated heterojunction bipolar photoreceiver; integrated photodetector-preamplifier circuit; receiver sensitivity; resistors; three-terminal phototransistor;
Journal_Title :
Electronics Letters
