Silicon-carbide high-voltage (400 V) Schottky barrier diodes

Author

Bhatnagar, M. ; McLarty, Peter K. ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

13

Issue

10

fYear

1992

Firstpage

501

Lastpage

503

Abstract

The authors describe the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes. Measurements of the forward I-V characteristics of these diodes demonstrate a low forward voltage drop of approximately 1.1 V at an on-state current density of 100 A/cm/sup 2/ for a temperature range of 25 to 200 degrees C. The reverse I-V characteristics of these devices exhibit a sharp breakdown, with breakdown voltages exceeding 400 V at 25 degrees C. In addition, these diodes are shown to have superior reverse recovery characteristics when compared with high-speed silicon P-i-N rectifiers.<>

Keywords

Schottky-barrier diodes; platinum; power electronics; semiconductor materials; silicon compounds; solid-state rectifiers; 1.1 V; 25 to 200 C; 400 V; 6H-SiC; Pt-SiC; Schottky barrier diodes; breakdown voltages; characteristics; fabrication; forward I-V characteristics; forward voltage drop; on-state current density; rectifiers; reverse I-V characteristics; reverse recovery characteristics; sharp breakdown; temperature range; Breakdown voltage; Current density; Current measurement; Density measurement; Fabrication; Low voltage; P-i-n diodes; Schottky barriers; Schottky diodes; Temperature distribution;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192814

Filename

192814