Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors

Author

Liu, William ; Fan, Shou-Kong

Author_Institution

Texas Instruments Inc., Dallas, TX, USA

Volume

13

Issue

10

fYear

1992

Firstpage

510

Lastpage

512

Abstract

GaInP/GaAs heterojunction bipolar transistors (HBTs) have been fabricated and these devices exhibit near-ideal I-V characteristics with very small magnitudes of the base-emitter junction space-charge recombination current. Measured current gains in both 6- mu m*6- mu m and 100- mu m*100- mu m devices remain constant for five decades of collector current and are greater than unity at ultrasmall current densities on the order of 1*10/sup -6/ A/cm/sup 2/. For the 6- mu m*6- mu m device, the current gain reaches a high value of 190 at higher current levels. These device characteristics are also compared to published data of an abrupt AlGaAs/GaAs HBT having a base layer with similar doping level and thickness.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 100 micron; 6 micron; GaInP-GaAs; HBT; base layer thickness; base-emitter junction; collector current; current gains; device characteristics; doping level; heterojunction bipolar transistors; near-ideal I-V characteristics; semiconductors; space-charge recombination current; ultrasmall current densities; Area measurement; Breakdown voltage; Current density; Current measurement; Density measurement; Doping; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192817

Filename

192817