Time-dependent dielectric breakdown characteristics of N/sub 2/O oxide under dynamic stressing

Author

Ahn, J. ; Joshi, A. ; Lo, G.Q. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

10

fYear

1992

Firstpage

513

Lastpage

515

Abstract

Time-dependent dielectric breakdown (TDDB) characteristics of MOS capacitors with thin (120-AA) N/sub 2/O gate oxide under dynamic unipolar and bipolar stress have been studied and compared to those with control thermal gate oxide of identical thickness. Results show that N/sub 2/O oxide has significant improvement in t/sub BD/ (2*under-V/sub g/ unipolar stress, 20*under+V/sub g/ unipolar stress, and 10*under bipolar stress). The improvement of t/sub BD/ in N/sub 2/O oxide is attributed to the suppressed electron trapping and enhanced hole detrapping due to the nitrogen incorporation at the SiO/sub 2//Si interface.<>

Keywords

capacitors; dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; oxidation; reliability; silicon compounds; 120 A; MOS capacitors; N/sub 2/O ambient grown oxides; Si/sub x/N/sub y/O/sub z/ oxides; Si/sub x/N/sub y/O/sub z/-Si; TDDB; bipolar stress; control thermal gate oxide; dynamic stressing; enhanced hole detrapping; suppressed electron trapping; time dependent dielectric breakdown; unipolar stress; Charge carrier processes; Dielectric breakdown; Electric breakdown; Electron traps; Frequency estimation; MOS devices; Stress control; Thermal stresses; Thickness control; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192818

Filename

192818