A new method of determination of the I-V characteristics of negative differential conductance devices

Author

Hwu, R.J. ; Abhyankar, A.M.

Author_Institution

Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA

Volume

13

Issue

10

fYear

1992

Firstpage

532

Lastpage

534

Abstract

A method for mapping the complete I-V characteristic of a negative differential conductance (NDC) device has been investigated. This method employs the measurable positive differential conductance (PDC) portions of the DC I-V curve together with the measured conductances at a fixed DC bias voltage in the PDC region with different RF signal levels using a standard semiconductor analyzer. The NDC regime of the I-V curve is numerically constructed from the measured conductances at a fixed DC bias voltage in the PDC region with different signal levels using a large-signal nonlinear-circuit analysis.<>

Keywords

electric current measurement; negative resistance; tunnel diodes; voltage measurement; DC I-V curve; I-V characteristics; NDC regime; RF signal levels; complete I-V characteristic mapping; large-signal nonlinear-circuit analysis; negative differential conductance devices; numerical reconstruction; semiconductor analyzer; tunnel diodes; Circuit synthesis; Current measurement; Hysteresis; Measurement standards; Power measurement; Quantum well devices; Resonant tunneling devices; Signal analysis; Student members; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192831

Filename

192831