Title :
Tunable InGaAsP/InP DFB lasers at 1.3 μm integrated
Author :
Sin, Yongkun ; Presser, N.
Author_Institution :
Electron. & Photonics Lab., Aerosp. Corp., El Segundo, CA, USA
Abstract :
Data is presented on tunable singlemode operation from 1.3
Keywords :
III-V semiconductors; distributed feedback lasers; focused ion beam technology; gallium arsenide; indium compounds; integrated optics; ion beam assisted deposition; laser tuning; platinum; quantum well lasers; thin film devices; 1.3 micron; 13 mA; InGaAsP-InP; coated planar buried heterostructure; distributed feedback lasers; emission spectra; focused ion beam deposited heater; integrated thin film heaters; multiple quantum well active layer; small heater current; three-step metal organic chemical vapour deposition; tunable singlemode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031186
