• DocumentCode
    849255
  • Title

    Selective nucleation and growth in 3% silicon steel

  • Author

    Heo, N.H. ; Kim, S.B. ; Choi, Y.S. ; Cho, S.S. ; Chai, K.H. ; Han, S.O.

  • Author_Institution
    Korea Electr. Power Res. Inst., Taejon, South Korea
  • Volume
    38
  • Issue
    5
  • fYear
    2002
  • fDate
    9/1/2002 12:00:00 AM
  • Firstpage
    3195
  • Lastpage
    3197
  • Abstract
    Due to the stronger bond strength of the Fe-S molecule than that of the Fe-Fe molecule, at the stage of nucleation the surface-segregated sulfur hinders the systematical movement of matrix atoms into the exact positions at the surface for the formation of the [110][001]. When the [110] grains form selectively at the strip surface, even a subdivision of a low concentration of surface-segregated sulfur determines, therefore, the degree of disturbance against movement of matrix atoms and, thus, the direction of the [110]: the [110][001] at a much lower concentration of surface-segregated sulfur and the [110][uvw]≠[001] under a lower condition of segregated sulfur. Due to the relatively higher mobility of matrix atoms, the probability that, at a fixed final reduction, the [110] grains survive through the selective growth of [100] grains and have finally a chance for selective growth decreases with increasing heating rate.
  • Keywords
    ferromagnetic materials; grain growth; iron alloys; nucleation; silicon alloys; surface segregation; Fe-Si:S; bond strength; selective grain growth; selective nucleation; silicon steel; sulfur surface segregation; Annealing; Etching; Furnaces; Heating; Hydrogen; Kinetic theory; Shape; Silicon; Steel; Strips;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2002.802412.
  • Filename
    1042495