Dependence of hot-carrier immunity on channel length and channel width in MOSFETs with N/sub 2/O-grown gate oxides

Author

Lo, G.Q. ; Ahn, J. ; Kwong, Dim-Lee ; Young, K.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

12

fYear

1992

Firstpage

651

Lastpage

653

Abstract

The authors report on the channel length (0.5-5 mu m) and width (0.6-10 mu m) dependence of hot-carrier immunity in n-MOSFETs with N/sub 2/O-grown gate oxides ( approximately 85 AA). While channel hot-carrier-induced degradation has a strong dependence on channel geometry in control devices, the degradation and its channel geometric dependences are greatly suppressed in devices with N/sub 2/O-gate oxides. Under Fowler-Nordheim injection stress, the control device shows an enhanced degradation with decreasing channel length and increasing channel width, whereas N/sub 2/O device exhibits a less dependence on channel geometry.<>

Keywords

hot carriers; insulated gate field effect transistors; oxidation; semiconductor device testing; 0.5 to 5 micron; 0.6 to 10 micron; Fowler-Nordheim injection stress; N/sub 2/O grown gate oxides; channel hot-carrier-induced degradation; channel length; channel width; hot-carrier immunity; nMOSFET; Degradation; Geometry; Hot carriers; Isolation technology; MOS devices; MOSFET circuits; Microelectronics; Oxidation; Stress control; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192874

Filename

192874