Title :
Metal-oxide-semiconductor structure with Ge nanocrystals
Author :
Das, K. ; Maikap, S. ; Dhar, A. ; Mathur, B.K. ; Ray, S.K.
Author_Institution :
Dept. of Phys. & Meteorol., IIT, Kharagpur, India
Abstract :
Metal-oxide-semiconductor structures with germanium
Keywords :
MIS structures; MOS capacitors; elemental semiconductors; flash memories; germanium; hysteresis; nanoparticles; photoluminescence; semiconductor quantum dots; tunnelling; C-V measurements; Ge; MOS capacitors; bias sweeping; cap gate oxides; charge storage characteristics; cross-sectional transmission electron micrographs; flash memory; germanium nanocrystals; hysteresis width; isolated nanocrystals; lattice fringes; metal-oxide-semiconductor structures; oxide matrix; photoluminescence; quantum confinement; quantum dot; rapid thermal annealing; sputter fabrication; trilayer dielectric stack; tunnelling oxides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031146
