Title :
Isothermal current instability and local breakdown in GaAs FET
Author :
Sinkevitch, V.F. ; Vashchenko, V.A.
fDate :
6/18/1992 12:00:00 AM
Abstract :
Results of experimental observations of the S-shaped I-V characteristic and current avalanche injection isothermal filaments in GaAs FETs is presented. Apparatus and methodical provision for the nondestructive control of the isothermal current instability and irreversible breakdown of the FET are proposed.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric breakdown of solids; gallium arsenide; GaAs; I-V characteristic; S-shaped characteristics; current avalanche injection; irreversible breakdown; isothermal current filaments; isothermal current instability; observations; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920801
