High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI

Author

Quemerais, Thomas ; Gloria, Daniel ; Golanski, Dominique ; Bouvot, Simon

Author_Institution

STMicroelectron., Crolles, France

Volume

36

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

87

Lastpage

89

Abstract

Accumulation MOS varactors on the low-power CMOS 28-nm fully depleted silicon on insulator (FDSOI) are presented with a minimum gate length of 43 nm. This process enable to improve the varactors quality factor (Q-factor) at high frequency, which can be employed for CMOS-based millimeter-wave (MMW) applications. Measured results up to 110 GHz show relatively high Q-factor close to 10 and relatively low series resistance for a conventional multifinger MOS varactors. The proposed MOS varactor is expected to improve the overall Q-factor of the inductor capacitor resonator (LC) tank of MMW oscillators.

Keywords

CMOS analogue integrated circuits; MIMIC; Q-factor; low-power electronics; millimetre wave oscillators; silicon-on-insulator; varactors; CMOS FDSOI; CMOS-based MMW application; CMOS-based millimeter-wave application; MMW oscillators; Q-factor; accumulation MOS varactors; frequency 110 GHz; high-Q MOS varactors; inductor LC tank; inductor capacitor resonator tank; low-power CMOS fully-depleted silicon on insulator; minimum gate length; multifinger MOS varactors; quality factor; series resistance; size 28 nm; CMOS integrated circuits; Electrical resistance measurement; Frequency measurement; Logic gates; Q-factor; Resistance; Varactors; CMOS 28 nm FDSO; CMOS 28 nm FDSOI; Millimeter-wave frequencies; accumulation varactors; high Q-factor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2378313

Filename

6980075