DocumentCode :
850441
Title :
InGaN microring light-emitting diodes
Author :
Choi, H.W. ; Jeon, C.W. ; Dawson, M.D.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
Volume :
16
Issue :
1
fYear :
2004
Firstpage :
33
Lastpage :
35
Abstract :
The fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and reabsorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, while the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed.
Keywords :
heat sinks; light emitting diodes; micro-optics; optical arrays; optical fabrication; InGaN microring light-emitting diodes; LED array; directed light extraction; internal reflections; large-area LED; light extraction; microring device geometry; reabsorption; surface area; Gallium nitride; Geometry; Light emitting diodes; Optical buffering; Optical device fabrication; Optical devices; Optical filters; Optical modulation; Optical resonators; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2003.818903
Filename :
1255942
Link To Document :
بازگشت