Title :
Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray Sources
Author_Institution :
Naval Research Laboratory Washington, D. C. 20375
Abstract :
A method for calculating electron transport in layered materials is described. It is applied to a problem of radiation damage in MOS capacitors irradiated with a Cu x-ray tube operated at 45 kV. The effects of photoelectron transport are found to be significant. A problem of energy deposition in x-ray lithography is also discussed. The dose in the SiO2 gate is found to be about equal to that in the x-ray photoresist. Electron transport effects are found to be small in this lithography problem.
Keywords :
Absorption; Electrons; Ionization; Laboratories; MOS capacitors; MOS devices; Radiation effects; Resists; Testing; X-ray lithography;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1980.4331052
