Intersubband absorption saturation in InGaAs-AlAsSb quantum wells

Author

Gopal, A.V. ; Yoshida, Hiroyuki ; Neogi, A. ; Georgiev, N. ; Mozume, Teruo

Author_Institution

Femtosecond Technol. Res. Assoc., Tsukuba

Volume

38

Issue

11

fYear

2002

fDate

11/1/2002 12:00:00 AM

Firstpage

1515

Lastpage

1520

Abstract

We present intersubband absorption saturation studies in InGaAs-AlAsSb quantum wells. We carried out a density matrix calculation to simulate the pulsed excitation condition after including the dephasing time and the short pulse profile to estimate the saturation intensity (I_S). We compare the calculated results with measurements for both resonant and nonresonant excitation. We also present our results on the effect of pulsewidth on Is estimation.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; matrix algebra; optical saturable absorption; semiconductor quantum wells; InGaAs-AlAsSb; InGaAs-AlAsSb quantum wells; density matrix calculation; dephasing time; intersubband absorption saturation; nonresonant excitation; pulsed excitation condition; pulsewidth; resonant excitation; saturation intensity; short pulse profile; Absorption; Conducting materials; Laboratories; Physics; Pulse measurements; Resonance; Space vector pulse width modulation; Switches; Ultrafast electronics; Ultrafast optics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2002.804293

Filename

1043350