DocumentCode
851422
Title
1 Gbit/s RZ zero-bias modulation of extremely low-threshold GaInAsP/InP DFB PPIBH laser
Author
Ohkura, Y.
Author_Institution
LSI R&D Lab., Mitsubishi Electric Corp., Hyogo
Volume
24
Issue
23
fYear
1988
fDate
11/10/1988 12:00:00 AM
Firstpage
1461
Lastpage
1462
Abstract
1 Gbit/s RZ pseudorandom and stable single-longitudinal-mode modulation without bias current has been demonstrated using a GaInAsP/InP DFB PPIBH laser. The results suggest that extremely low-threshold GaInAsP/InP single-longitudinal-mode lasers have the potential of application for long-haul, high-bit-rate transmission without any bias current
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; optical communication equipment; optical modulation; semiconductor junction lasers; 1 Gbit/s; DFB PPIBH laser; GaInAsP-InP; RZ zero-bias modulation; extremely low-threshold; high-bit-rate transmission; stable single-longitudinal-mode modulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
46109
Link To Document