15 W Single Frequency Optically Pumped Semiconductor Laser With Sub-Megahertz Linewidth

Author

Laurain, Alexandre ; Mart, Cody ; Hader, J. ; Moloney, Jerome V. ; Kunert, Bernardette ; Stolz, Wolfgang

Author_Institution

Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA

Volume

26

Issue

2

fYear

2014

fDate

Jan.15, 2014

Firstpage

131

Lastpage

133

Abstract

We report on a single frequency optically pumped semiconductor laser exhibiting an output power of 15 W in continuous wave operation. The GaAs-based structure presents an emission wavelength of 1020 nm and a tuning range , with a continuous tunability of 9 GHz. The TEM₀₀ output beam exhibits very low transverse phase fluctuations across the entire mode, leading to a beam quality . A free-running laser linewidth of 21 kHz has been deduced from frequency noise measurements for a sampling time of 1 ms and increases to 995 kHz for a sampling time of 1 s.

Keywords

III-V semiconductors; gallium arsenide; laser beams; laser modes; laser noise; laser tuning; optical pumping; quantum well lasers; spectral line breadth; GaAs; GaAs-based structure; TEM₀₀ output beam; beam quality; continuous wave operation; emission wavelength; free-running laser linewidth; frequency 9 GHz; frequency noise measurements; output power; power 15 W; sampling time; single frequency optically pumped semiconductor laser; submegahertz linewidth; time 1 ms; time 1 s; transverse phase fluctuations; tuning range; wavelength 1020 nm; Laser beams; Laser excitation; Laser modes; Laser noise; Measurement by laser beam; Power generation; Semiconductor lasers; OPSL; VECSEL; coherence; high power; linewidth; semiconductor; single frequency;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2290062

Filename

6657739