Reduced power consumption in GaAs-based bipolar cascade lasers

Author

Siskaninetz, W.J. ; Ehret, J.E. ; Dang, T.N. ; Van Nostrand, H.E. ; Lott, J.A. ; Nelson, T.R., Jr.

Author_Institution

Sensors Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA

Volume

38

Issue

21

fYear

2002

fDate

10/10/2002 12:00:00 AM

Firstpage

1259

Lastpage

1261

Abstract

A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n⁺ and p⁺ regions grown by MBE were investigated and the most promising designs were placed within the individual laser substructures. This resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.

Keywords

III-V semiconductors; gallium arsenide; laser cavity resonators; quantum well lasers; GaAs; MBE; bipolar cascade lasers; current voltage characteristics; degenerately doped regions; differential quantum efficiency; edge-emitting laser devices; epitaxially stacked lasers; lasing characteristics; multiple-cavity device; multiple-colour emission; p-doping concentration; reduced power consumption; room-temperature characteristics; stacked quantum well active regions; tunnel junctions;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020857

Filename

1043707