• DocumentCode
    852308
  • Title

    Digital circuit on x=0.35 Hg1-xCdxTe

  • Author

    Schiebel, R.A. ; Dodge, J. ; Gooch, R.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    25
  • Issue
    8
  • fYear
    1989
  • fDate
    4/13/1989 12:00:00 AM
  • Firstpage
    530
  • Lastpage
    531
  • Abstract
    The authors report the demonstration of a digital circuit on HgCdTe. The circuit is a single-bit dynamic shift register, using a ratioless inverter design. The circuit was fabricated on epitaxially grown HgCdTe, with a cutoff wavelength of 3.56 mu m at 77 K. The circuit´s properties are presented and discussed.
  • Keywords
    II-VI semiconductors; cadmium compounds; digital integrated circuits; field effect integrated circuits; infrared detectors; mercury compounds; shift registers; 3.56 micron; 77 K; Hg 1-xCd xTe; II-VI semiconductors; IR detectors; MISFET IC; ZnS gate insulation; cutoff wavelength; digital circuit; ratioless inverter design; single-bit dynamic shift register;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890363
  • Filename
    46148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852308