Title :
Novel silicon-on-insulator MOSFET for high-voltage integrated circuits
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
fDate :
4/13/1989 12:00:00 AM
Abstract :
A novel silicon-on-insulator MOSFET for high-voltage ICs is presented. Computer simulations are given to prove the high-voltage capability of the device structure. Also given is a practical implementation procedure.
Keywords :
CMOS integrated circuits; MOS integrated circuits; insulated gate field effect transistors; power integrated circuits; power transistors; CMOS IC; HV capability; HVIC; MOS IC; MOSFET; SOI device; Si; device structure; high-voltage integrated circuits; implementation procedure; n-channel devices; p-channel devices; power IC; simulations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890367
