HfO₂ and ZrO₂ alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition

Author

Taylor, S. ; Williams, P.A. ; Roberts, J.L. ; Jones, A.C. ; Chalker, P.R.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ., UK

Volume

38

Issue

21

fYear

2002

fDate

10/10/2002 12:00:00 AM

Firstpage

1285

Lastpage

1286

Abstract

Capacitance-voltage measurements are reported on MOSC devices with ZrO₂ and HfO₂ gate dielectrics fabricated using novel zirconium and hafnium alkoxide volatile mononuclear complexes. These complexes are significantly less reactive to air and moisture than existing Zr and Hf alkoxides. Feasibility is shown of using this liquid injection chemical vapour deposition method with these precursors for high-k gate dielectric realisation for submicron MOS devices.

Keywords

MOCVD; MOS capacitors; dielectric thin films; hafnium compounds; interface states; permittivity; zirconium compounds; HfO₂; MOS capacitors; ZrO₂; accumulation conditions; alkoxide volatile mononuclear complexes; alternative gate dielectrics; capacitance-voltage measurements; depletion conditions; high-k gate dielectric; interface states; inversion conditions; liquid injection chemical vapour deposition; oxide growth rate; relative permittivity; submicron MOS devices; substrate temperature; work function differences;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020801

Filename

1043723

HfO2 and ZrO2 alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition

Taylor, S. ; Williams, P.A. ; Roberts, J.L. ; Jones, A.C. ; Chalker, P.R.

jour

HfO₂ and ZrO₂ alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition