• DocumentCode
    852537
  • Title

    IGBT-based kilovoltage pulsers for ultrasound measurement applications

  • Author

    Gammell, Paul M. ; Harris, Gerald R.

  • Author_Institution
    Gammell Appl. Technol., Exmore, VA, USA
  • Volume
    50
  • Issue
    12
  • fYear
    2003
  • Firstpage
    1722
  • Lastpage
    1728
  • Abstract
    Two high-voltage pulser designs are presented that offer advantages in some ultrasound measurement applications, such as driving thick ultrasonic source transducers used for broadband measurements of attenuation or hydrophone frequency response and directivity. The pulsers use integrated gate bipolar transistors (IGBTs) as the switching devices, and in one design an output voltage pulse is produced that has a peak amplitude nearly twice that of the supply voltage. The pulsers are inexpensive and relatively easy to construct. The power supply need only provide the average current to charge the capacitors, as opposed to the much higher peak pulse current. With a 1200 V supply and a pulse repetition frequency of 200 Hz, the nondoubling and doubling pulsers provided peak voltages of greater than 1100 V and 2200 V, respectively, into loads ranging from 50 /spl Omega/ to 500 /spl Omega/. For a 50 /spl Omega/ load, slewing rates of 38 V/ns and 23 V/ns were measured for the nondoubling and doubling pulsers, respectively. For a 500 /spl Omega/ load these values were 56 V/ns and 36 V/ns.
  • Keywords
    attenuation measurement; bipolar transistor switches; frequency multipliers; frequency response; hydrophones; insulated gate bipolar transistors; ultrasonic measurement; ultrasonic transducers; 1100 V; 1200 V; 200 Hz; 2200 V; 50 to 500 ohm; IGBT based kilovoltage pulsers; attenuation; broadband measurements; directivity; hydrophone frequency response; integrated gate bipolar transistors; nondoubling; output voltage pulse; peak amplitude; peak pulse current; pulsers; slewing rates; supply voltage; switching devices; thick ultrasonic source transducers; ultrasound measurement applications; Attenuation measurement; Frequency measurement; Insulated gate bipolar transistors; Pulse measurements; Pulsed power supplies; Thickness measurement; Ultrasonic imaging; Ultrasonic transducers; Ultrasonic variables measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/TUFFC.2003.1256313
  • Filename
    1256313