High-performance dual-layer channel ITO/TZO/TFTs fabricated on glass substrate

Author

Zhuofa Chen ; Dedong Han ; Nannan Zhao ; Yingying Cong ; Jing Wu ; Junchen Dong ; Feilong Zhao ; Lifeng Liu ; Shengdong Zhang ; Xing Zhang ; Yi Wang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

50

Issue

8

fYear

2014

fDate

April 10 2014

Firstpage

633

Lastpage

635

Abstract

High-performance fully transparent bottom-gate type dual-layer (ITO/TZO) channel thin-film transistors (ITO/TZO TFTs) have been successfully fabricated on a glass substrate at low temperature (below 100°C). The results show that dual-layer channel (ITO/TZO) TFTs, compared to the single channel TZO TFTs and ITO TFTs, exhibit better electrical properties, with a low I_off of 1.5 × 10^-11 A, a high on/off ratio of 5.78 × 10⁷, a high saturation mobility μ_s of 292 cm²/V·s, a high linear mobility μ_l of 105.4 cm²/V·s, a steep subthreshold swing of 0.33 V/decade and a threshold voltage V_th of 3.16 V. The results show that excellent device performance can be realised in ITO/TZO TFTs.

Keywords

amorphous semiconductors; indium compounds; substrates; thin film transistors; tin compounds; zinc compounds; ITO; ITO TFT; ITO-TZO thin-film transistors; device performance; fully transparent dual-layer channel ITO-TZO TFT; glass substrate; high-performance bottom-gate type dual-layer channel TFT; linear mobility; saturation mobility; single channel TZO TFT; subthreshold swing; threshold voltage; voltage 3.16 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.0344

Filename

6802171