DocumentCode
85382
Title
Excellent epitaxial graphene layers grown simply on SiC substrates and their characterisation
Author
Jeong, Sangkwon ; Lee, Edward ; Yim, Mark ; Yoon, Giwan
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Volume
50
Issue
2
fYear
2014
fDate
January 16 2014
Firstpage
98
Lastpage
100
Abstract
A few-layer-thick epitaxial graphene synthesised on both the up-side and the down-side surfaces of SiC wafers in an ultra-high vacuum annealing furnace is presented. The graphene grown on the down-side surfaces of the SiC wafers that contacted with a graphite pedestal resulted in a relatively lower sheet resistance along with less graphene layers, as compared with that of their up-side surfaces. Overall, the sheet resistance of the few-layer-thick graphene grown on the down-side was found to range from 200 to 3 Ω/□, depending on the annealing time.
Keywords
annealing; electric resistance; graphene; semiconductor epitaxial layers; silicon compounds; substrates; C; SiC; SiC substrates; down-side surfaces; epitaxial graphene layers; sheet resistance; ultra-high vacuum annealing furnace; up-side surfaces;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.3391
Filename
6729331
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