• DocumentCode
    853971
  • Title

    State-space Integral-equation method for the S-domain modeling of planar circuits on semiconducting substrates

  • Author

    Conciauro, Giuseppe ; Arcioni, Paolo ; Bressan, Marco

  • Author_Institution
    Dept. of Electron., Univ. of Pavia, Italy
  • Volume
    51
  • Issue
    12
  • fYear
    2003
  • Firstpage
    2315
  • Lastpage
    2326
  • Abstract
    This paper presents a new and very efficient integral method for the electromagnetic modeling of planar circuits on multilayered semiconducting substrates. Differently from standard integral approaches, the method leads to a state-space model of the circuit. This model directly permits to find the admittance matrix in the form of a reduced-order pole expansion in the S-domain through standard Krylov sub-space techniques. Three examples demonstrate the really good performances of the method in terms of accuracy and rapidity.
  • Keywords
    domains; electromagnetic field theory; elemental semiconductors; metallisation; microwave integrated circuits; silicon; silicon compounds; state-space methods; Krylov sub-space techniques; S-domain modeling; Si-SiO2; electromagnetic modeling; microwave integrated circuits; multilayered semiconducting substrates; planar circuits; state-space integral-equation; Admittance; Electromagnetic modeling; Integral equations; Integrated circuit modeling; Mathematical model; Metallization; Semiconductivity; Substrates; Transmission line matrix methods; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2003.819767
  • Filename
    1256763