• DocumentCode
    85406
  • Title

    Compact low driving voltage (<400 mVpp) electro-absorption modulator laterally integrated with VCSEL

  • Author

    Dalir, Hamed ; Takahashi, Y. ; Koyama, Fumio

  • Author_Institution
    Precision & Intell. Lab., Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    50
  • Issue
    2
  • fYear
    2014
  • fDate
    January 16 2014
  • Firstpage
    101
  • Lastpage
    103
  • Abstract
    An ultra-compact (8 μm long) electro-absorption modulator is presented which is laterally integrated with a 980 nm InGaAs vertical cavity surface emitting laser incorporating a bow-tie-shaped oxide aperture. A low driving voltage operation below 400 mVpp for a dynamic extinction ratio of 6 dB and a large signal modulation of up to 25 Gbit/s is demonstrated. The static extinction ratio of over 6 dB can be obtained by applying an extremely low voltage of -200 mV.
  • Keywords
    III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; surface emitting lasers; InGaAs; VCSEL; bit rate 25 Gbit/s; bow-tie-shape oxide aperture; electro-absorption modulator; signal modulation; static extinction ratio; vertical cavity surface emitting laser; voltage -200 mV; wavelength 8 mum; wavelength 980 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.3662
  • Filename
    6729333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=85406