• DocumentCode
    854288
  • Title

    Carbon-doped base AlGaAs/GaAs HBTs grown by MOCVD using TMAs

  • Author

    Ito, H. ; Kobayashi, Takehiko ; Ishibashi, Takayuki

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    25
  • Issue
    19
  • fYear
    1989
  • Firstpage
    1302
  • Lastpage
    1303
  • Abstract
    AlGaAs/GaAs HBTs with carbon-doped bases are grown by conventional low-pressure MOCVD using trimethylarsine as the carbon source for the first time. The obtained current gain values of 100 for 5*1018 cm-3 base doping and 40 for 1*1019 cm-3 base doping reveal the feasibility of trimethylarsine as a p-type dopant source for MOCVD growth.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor growth; AlGaAs-GaAs:C; C doped bases; HBTs; III-V semiconductors; MOCVD; base doping; carbon source; chemical vapour deposition; current gain; heterojunction bipolar transistors; low-pressure MOCVD; p-type dopant source; semiconductor growth; trimethylarsine;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890871
  • Filename
    46193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=854288