DocumentCode :
854444
Title :
Etch rates for micromachining processing-Part II
Author :
Williams, Kirt R. ; Gupta, Kishan ; Wasilik, Matthew
Author_Institution :
Agilent Labs., Portola Valley, CA, USA
Volume :
12
Issue :
6
fYear :
2003
Firstpage :
761
Lastpage :
778
Abstract :
Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparations of silicon nitride, sapphire, two preparations of aluminum oxide, aluminum, Al/2%Si, titanium, vanadium, niobium, two preparations of tantalum, two preparations of chromium, Cr on Au, molybdenum, tungsten, nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80 Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C, and spin-on polyimide. Selected samples were etched in 35 different etches: isotropic silicon etchant, potassium hydroxide, 10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum Etchant Type A, titanium wet etchant, CR-7 chromium etchant, CR-14 chromium etchant, molybdenum etchant, warm hydrogen peroxide, Copper Etchant Type CE-200, Copper Etchant APS 100, dilute aqua regia, AU-5 gold etchant, Nichrome Etchant TFN, hot sulfuric+phosphoric acids, Piranha, Microstrip 2001, acetone, methanol, isopropanol, xenon difluoride, HF+H2O vapor, oxygen plasma, two deep reactive ion etch recipes with two different types of wafer clamping, SF6 plasma, SF6+O2 plasma, CF4 plasma, CF4+O2 plasma, and argon ion milling. The etch rates of 620 combinations of these were measured. The etch rates of thermal oxide in different dilutions of HF and BHF are also reported. Sample preparation and information about the etches is given.
Keywords :
Ge-Si alloys; aluminium; aluminium alloys; chromium; collections of physical data; copper; germanium; gold; graphite; micromachining; molybdenum; nickel; palladium; photoresists; quartz; sapphire; silicon; silicon compounds; silver; sputter etching; titanium compounds; tungsten; Ag; Al; Al-Si; Al2O3; Au; C; Cr; Cu; Ge; Mo; Nb; Ni; Parylene-C; Pd; Pt; Pyrex 7740; Si; Si3N4; SiGe; SiO2; Ta; Ti; TiN; V; W; data tables; deep reactive ion etch; etch rates; fused quartz; graphite; ion milling; microelectromechanical systems; micromachining processing; photoresist; plasma etch; polycrystalline SiGe; polycrystalline germanium; polycrystalline silicon; resist pen; sapphire; single-crystal silicon; spin-on polyimide; Aluminum; Chromium; Copper; Doping; Gold; Micromachining; Plasma applications; Plasma measurements; Silicon; Wet etching;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2003.820936
Filename :
1257354
Link To Document :
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