• DocumentCode
    854520
  • Title

    High-voltage constraints for vacuum packaged microstructures

  • Author

    Wilson, Chester G. ; Gianchandani, Yogesh B. ; Wendt, Amy E.

  • Author_Institution
    EECS Dept., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    12
  • Issue
    6
  • fYear
    2003
  • Firstpage
    835
  • Lastpage
    839
  • Abstract
    In order to understand the details of high-field breakdown in microstructures that are vacuum packaged, a series of experiments are used to determine characteristics of microdischarges. The results support a reinterpretation of conventional assumptions based upon large scale discharges. When planar microelectrodes are used, Paschen´s curve is not applicable in the traditional sense: the breakdown voltage is relatively insensitive to pressure in the 1-20 torr range, and remains at ∼400 V for air ambient. However, the spatial distribution of discharge current does vary with the pressure and the power. Large voltage gradients are supported in the glow region which is confined to a few millimeters directly above the cathode, and within a few hundred microns of its lateral edge. Their magnitudes range from 100,000-500,000 V/m for operating pressures ranging from 1.2-6 torr. Based on these results, guidelines are provided for the design of high-voltage microsystems.
  • Keywords
    glow discharges; high field effects; micromachining; micromechanical devices; plasma materials processing; semiconductor device breakdown; semiconductor device packaging; sputter etching; vacuum breakdown; 1 to 20 torr; 400 V; Paschen curve; design guidelines; electrostatic devices; glow region; high-field breakdown; high-voltage constraints; high-voltage microsystems; microdischarges; planar microelectrodes; vacuum packaged microstructures; Avalanche breakdown; Electric breakdown; Electrodes; Geologic measurements; Guidelines; Microstructure; Packaging; Sea measurements; Vacuum breakdown; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2003.820278
  • Filename
    1257361