DocumentCode
854801
Title
Optical waveguide phase modulator in GaInAsP using depletion edge translation
Author
Kowalsky, Wolfgang ; Ebeling, K.J.
Volume
24
Issue
9
fYear
1988
fDate
4/28/1988 12:00:00 AM
Firstpage
518
Lastpage
519
Abstract
Under reverse bias a phase shift per unit length of up to 500°/mm is observed in a GaInAsP/InP inverted rib waveguide embedded in a double-heterostructure pin diode. The waveguides were fabricated by wet chemical etching and subsequent liquid phase epitaxy. Diodes were formed by selective Zn diffusion in the InP cladding layer. The planar structure is favourable for integration with other electronic or optoelectronic devices
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical modulation; optical waveguide components; DH PIN diode; GaInAsP-InP inverted rib waveguide; InP cladding layer; depletion edge translation; liquid phase epitaxy; optical waveguide phase modulator; optoelectronic integration; phase shift; planar structure; reverse bias; selective Zn diffusion; wet chemical etching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
19539
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