DocumentCode :
854896
Title :
Negative resistance and hysteresis in a germanium-silicon heterojunction
Author :
Wei, L.Y. ; Shewchun, J.
Volume :
51
Issue :
6
fYear :
1963
fDate :
6/1/1963 12:00:00 AM
Firstpage :
946
Lastpage :
946
Keywords :
Breakdown voltage; Frequency; Germanium silicon alloys; Heterojunctions; Hysteresis; Ionization; P-i-n diodes; Semiconductor diodes; Silicon germanium; Temperature;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2344
Filename :
1444274
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=854896
