Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

Heavily doped n⁺ InP and GaInAs epitaxial layers have been grown by metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn-doped InP and GaInAs layers have been grown with doping levels as high as n_300K approximately=3.3*10¹⁹ cm^-3 and n_300K approximately=6.1*10¹⁹ cm^-3, respectively. Analysis of the Sn concentration in InP:Sn and GaInAs:Sn layers using secondary ion mass spectrometry (SIMS) shows that all of the Sn is ionised in InP and GaInAs. Hall measurements of N_d-N_a at 300 and 77 K indicate that the Sn is uncompensated up to these levels. SIMS analysis also shows that the use of TESn for the growth of n⁺ InP and GaInAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.