• DocumentCode
    855194
  • Title

    Laser Annealing of Ion Implanted Silicon

  • Author

    White, C.W. ; Appleton, B.R. ; Wilson, S.R.

  • Author_Institution
    Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37830
  • Volume
    28
  • Issue
    2
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    1759
  • Lastpage
    1962
  • Abstract
    Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes occurring at the interface during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k¿) and the maximum substitutional solubilities (Csmax) are far greater than equilibrium values. Both k¿ and Csmax are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed.
  • Keywords
    Crystals; Laser modes; Lead; Optical pulses; Power lasers; Pulsed laser deposition; Rapid thermal annealing; Semiconductor lasers; Silicon alloys; Surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4331515
  • Filename
    4331515
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=855194