• DocumentCode
    855408
  • Title

    New method for the extraction of MOSFET parameters

  • Author

    Ghibaudo, Gerard

  • Author_Institution
    Sachs & Freeman Associates Inc., Landover, MD
  • Volume
    24
  • Issue
    9
  • fYear
    1988
  • fDate
    4/28/1988 12:00:00 AM
  • Firstpage
    543
  • Lastpage
    545
  • Abstract
    A new method for the extraction of the MOSFET parameters is presented. The method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage Vt, the low field mobility μ0 and the mobility attenuation coefficient θ to be obtained
  • Keywords
    carrier mobility; insulated gate field effect transistors; MOSFET parameters; drain current; extraction; low field mobility; mobility attenuation coefficient; threshold voltage; transconductance transfer characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    19558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=855408