DocumentCode

855757

Title

Conditions for a temperature compensated silicon field effect transistor

Author

Hoerni, J.A. ; Weir, B.

Volume

51

Issue

7

fYear

1963

fDate

7/1/1963 12:00:00 AM

Firstpage

1058

Lastpage

1059

Keywords

Conductivity; Doping profiles; Electronic switching systems; FETs; Geometry; Photonic band gap; Scattering parameters; Silicon; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1963.2424

Filename

1444354