Title :
Improved AlxGa1-xAs/Ga1-yIny As/GaAs strained-layer double barrier resonant tunnelling structure
Author :
Yang, C.H. ; Shih, H.D.
Author_Institution :
Texas Instrum. Inc., Dallas, TX
fDate :
4/28/1988 12:00:00 AM
Abstract :
Reports the observation of differential negative resistance in a resonant tunnelling diode which consists of Al0.35Ga0.65 As barriers and a Ga0.80In0.20As quantum well, grown on GaAs substrate by molecular beam epitaxy (MBE) at a constant substrate temperature of 550°C, for the entire structure. The current peak/valley ratio at resonance is 6 to 1 at 77 K. The result demonstrates the feasibility of preparing device-quality MBE Alx Ga1-xAs layers at low substrate temperature and fabricating quantum devices involving heterojunctions with severe strain
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; negative resistance; semiconductor epitaxial layers; tunnel diodes; AlxGa1-xAs-Ga1-yIny As-GaAs; III-V semiconductors; device-quality; differential negative resistance; heterojunctions; molecular beam epitaxy; peak/valley ratio; quantum devices; quantum well; resonant tunnelling diode; strained-layer double barrier resonant tunnelling structure; substrate temperature;
Journal_Title :
Electronics Letters
