Title :
High-tilt-angle boron implantation into polycrystalline Si gates
Author :
Suzuki, Kunihiro ; Kataoka, Yuji
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
We ion-implanted B into 400-nm-thick polycrystalline Si and evaluated the profiles. The ion-implanted profiles were almost the same for tilt angles of 0° and 7°. The channeling tail was more significant than the profile in crystalline Si with a tilt of 0°. The channeling phenomenon was significantly suppressed by high-tilt angles because ions cross grain boundaries. We succeeded in expressing these prominent profiles through using an analytical model.
Keywords :
elemental semiconductors; ion implantation; semiconductor junctions; silicon compounds; tunnelling; channeling phenomenon; channeling tail; grain boundaries; high-tilt-angle boron implantation; ion-implantation; polycrystalline silicon gates; Amorphous materials; Analytical models; Boron; Crystallization; Grain boundaries; Grain size; Impurities; Ion implantation; MOSFETs; Tail;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.821386
