• DocumentCode
    856955
  • Title

    When self-consistency makes a difference

  • Author

    Bonani, Fabrizio ; Camarchia, Vittorio ; Cappelluti, Federica ; Guerrieri, Simona Donati ; Ghione, Giovanni ; Pirola, Marco

  • Author_Institution
    Electron. Dept., Politec. di Torino, Torino
  • Volume
    9
  • Issue
    5
  • fYear
    2008
  • Firstpage
    81
  • Lastpage
    89
  • Abstract
    Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of self- consistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. Two examples have been shown, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling can be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximation; in the discussion presented it exploited a Wiener approach, but of course the strategy should be tailored to the specific problem under consideration.
  • Keywords
    CAD; circuit analysis computing; equivalent circuits; heterojunction bipolar transistors; high electron mobility transistors; power semiconductor devices; semiconductor device models; stochastic processes; thermal analysis; HBTs; HEMT modeling; Wiener approach; circuit-oriented CAD tools; compound semiconductor RF power; current collapse; electrothermal equivalent circuits; heterojunction bipolar transistor; intermodulation products modeling; microwave device modeling; system-level approximation; thermal dynamics; Electromagnetic heating; Electrothermal effects; Gallium nitride; Microwave devices; Radio frequency; Silicon carbide; Temperature distribution; Thermal conductivity; Thermal management; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/MMM.2008.927638
  • Filename
    4622775