A CMOS single-pole-four-throw switch

Author

Kwangchun Jung ; O, K.K.

Author_Institution

Silicon Microwave Integrated Circuit & Syst. Res. Group, Univ. of Florida, Gainesville, FL

Volume

16

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

128

Lastpage

130

Abstract

An one-pole-four-throw switch that can be used to switch between the band select filters of four cellular bands and a single input programmable low noise amplifier has been demonstrated in a 0.18-mum complementary metal oxide semiconductor process. Its insertion losses are 0.39, 0.61, 0.66, and 0.75dB in the GSM900, DCS1800, PCS1900, and wide-band code division multiple access system bands. IIP3´s of the switch are ~27dBm and isolations are greater than 22dB

Keywords

CMOS integrated circuits; field effect transistor switches; low noise amplifiers; poles and zeros; 0.18 micron; 0.39 dB; 0.61 dB; 0.66 dB; 0.75 dB; CMOS field effect transistor switch; CMOS integrated circuits; CMOS process; band select filter; cellular band; one-pole-four-throw switch; radio frequency switch; single input programmable low noise amplifier; single-pole-four-throw switch; wide-band code division multiple access system band; Communication switching; Costs; Filters; Insertion loss; Multiaccess communication; Parasitic capacitance; Radio frequency; Resistors; Switches; Switching circuits; 1P4T switch; Complementary metal oxide seminconductor (CMOS) integrated circuits; metal oxide semiconductor field effect transistor (MOSFET) switch; radio frequency (RF) switch;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.869857

Filename

1603588