Title :
High-efficiency 1.3 μm InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links
Author :
Loi, K.K. ; Sakamoto, I. ; Mei, X.B. ; Tu, C.W. ; Chang, W.S.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
High-efficiency electroabsorption waveguide modulators have been designed and fabricated using strain-compensated InAsP-GaInP multiple quantum wells at 1.32-μm wavelength. A typical 200-μm-long modulator exhibits a fiber-to-fiber optical insertion loss of 9 dB and an optical saturation intensity larger than 10 mW. The 3-dB electrical bandwidth is in excess of 20 GHz with a 50-/spl Omega/ load termination. When used in an analog microwave fiber-optic link without amplification, a RF link efficiency as high as -38 dB is achieved at 10 mW input optical carrier power. These analog link characteristics are the first reported using MQW electroabsorption waveguide modulators at 1.32 μm.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium compounds; high-speed optical techniques; indium compounds; microwave links; optical communication equipment; optical design techniques; optical fabrication; optical fibre communication; optical fibre losses; optical waveguide components; optical waveguides; semiconductor quantum wells; 1.3 mum; 1.32 mum; 10 mW; 20 GHz; 200 mum; 9 dB; InAsP-GaInP; MQW electroabsorption waveguide modulators; RF link efficiency; analog link characteristics; electrical bandwidth; electroabsorption waveguide modulators; fiber-to-fiber optical insertion loss; load termination; microwave fiber-optic links; optical carrier power; optical saturation intensity; strain-compensated multiple quantum wells; Bandwidth; Insertion loss; Intensity modulation; Optical fiber losses; Optical fibers; Optical modulation; Optical saturation; Optical waveguides; Quantum well devices; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
