Novel wavelength-resonant optoelectronic structure and its application to surface-emitting semiconductor lasers

Author

Raja, M. Yasin Akhtar ; Brueck, Steven R. J. ; Osinski, M. ; Schaus, C.F. ; McInerney, J.G. ; Brennan, T.M.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM

Volume

24

Issue

18

fYear

1988

fDate

9/1/1988 12:00:00 AM

Firstpage

1140

Lastpage

1142

Abstract

An optimised design for optoelectronic devices which depends on the interaction between an electromagnetic standing wave and the carrier population is described. The structure consists of quantum well layers spaced at one-half the wavelength of a selected optical transition in quantum wells. This spatial periodicity allows the amplifying or absorbing medium (quantum wells) to coincide with the peaks of the standing wave optical field in the Fabry-Perot cavity. In such a periodic medium, the gain or absorption for the selected wavelength is enhanced by a factor of two compared to a uniform medium. This concept was applied to fabricate a surface-emitting semiconductor laser in the GaAs/AlGaAs system. Lasing was achieved with the shortest gain medium length (320 nm) ever reported

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; laser cavity resonators; optoelectronic devices; semiconductor junction lasers; 320 nm; Fabry-Perot cavity; GaAs-AlGaAs; III-V semiconductors; carrier population; electromagnetic standing wave; quantum well layers; spatial periodicity; standing wave optical field; surface-emitting semiconductor lasers; vertical cavity device; wavelength-resonant optoelectronic structure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

19593