Engineered polarization control of GaAs/AlGaAs surface-emitting lasers by anisotropic stress from elliptical etched substrate hole

Author

Mukaihara, T. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

5

Issue

2

fYear

1993

Firstpage

133

Lastpage

135

Abstract

The engineered polarization control of surface emitting (SE) lasers, based on the observed evidence of the polarization determination, is reported. Thermally stressed epitaxial layers including an active region are made anisotropic by an elliptically etched substrate structure. This stress causes an anisotropy in optical gain of the active region. The polarization control has been demonstrated with about 80% reproducibility in etched-well-type surface emitting (SE) lasers by employing a thick gold film or a polyimide as a stress-enhancing material.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; piezo-optical effects; semiconductor lasers; GaAs-AlGaAs; GaAs/AlGaAs surface-emitting lasers; III-V semiconductor; active region; anisotropic stress; elliptical etched substrate hole; etched well type surface emitted lasers; optical gain anisotropy; polarization control; polyimide; stress-enhancing material; thermally stressed epitaxial layers; thick Au film; Anisotropic magnetoresistance; Epitaxial layers; Etching; Gallium arsenide; Optical control; Optical films; Optical polarization; Substrates; Surface emitting lasers; Thermal stresses;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.195981

Filename

195981