Vertical n-i-n multiple-quantum-well electrooptical modulators for high-speed applications

Author

Zumkley, S. ; Wingen, G. ; Oudar, J.L. ; Michel, J.C. ; Planel, R. ; Jäger, D.

Author_Institution

Fachgebiet Optoelektronik, Duisburg Univ., Germany

Volume

5

Issue

2

fYear

1993

Firstpage

178

Lastpage

180

Abstract

The authors report on a vertical n-i-n AlGaAs multiple-quantum-well electrooptical modulator with a reflectivity change of 40% and a contrast ratio of 6 dB (0 to 10 V) with a corresponding insertion loss of 2.5 dB. The current of the device is kept low by using undoped barrier layers cladding the intrinsic quantum-well region. The efficiency of this device is comparable to that of a device using a pin structure. Modulation in the gigahertz region has been observed by using a coplanar traveling-wave structure yielding a slowing factor of about 93 at a frequency of 1 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; high-speed optical techniques; integrated optics; integrated optoelectronics; optical modulation; reflectivity; semiconductor quantum wells; 0 to 10 V; 1 GHz; 2.5 dB; AlGaAs; III-V semiconductor; MMIC; contrast ratio; coplanar traveling-wave structure; efficiency; gigahertz region; high speed interconnects; high-speed applications; insertion loss; intrinsic quantum-well region; reflectivity change; slowing factor; undoped barrier layers; vertical n-i-n AlGaAs multiple-quantum-well electrooptical modulator; Electrooptic modulators; Fabry-Perot; Gallium arsenide; High speed optical techniques; Mirrors; Optical modulation; Optical reflection; Optical resonators; Optical signal processing; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.195996

Filename

195996