Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25 degrees C to 95 degrees C operating range

Author

Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y. ; Miller, D.A.B.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

5

Issue

2

fYear

1993

Firstpage

181

Lastpage

184

Abstract

A multiple-quantum-well (MQW) modulator with multiple stacked p-i(MQW)-n-i(MQW)-p-regions is demonstrated. Electrodes are deposited such that all the n-layers are connected to one contact and all the p-layers to the other. This allows high fields to be produced in the i-regions with relatively low voltages, since the i-regions may be made thin while retaining large optical interaction because they are stacked. A large usable wavelength range which translates into a large operating temperature range is obtained because of large Stark shifts in the MQWs at high fields. For a 0 to 6 V swing >22% reflectivity change from 25 degrees C to 95 degrees C, or alternatively over a wavelength range of 15 nm at 25 degrees C, is achieved.<>

Keywords

Stark effect; electro-optical devices; electroabsorption; integrated optics; integrated optoelectronics; optical modulation; reflectivity; semiconductor quantum wells; 25 to 95 degC; AlAs-AlGaAs; GaAs; MQW modulator; doping-selective electrodes; high fields; large Stark shifts; large optical interaction; multiple stacked p-i-n-i-p-regions; reflectivity change; wavelength range; Capacitance; Electrodes; Excitons; Optical arrays; Optical devices; Optical modulation; Quantum well devices; Reflectivity; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.195997

Filename

195997