Title :
Spectral linewidth of AlGaAs/GaAs surface-emitting laser
Author :
Tanobe, Hiromasa ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
The spectral linewidth Delta nu of a vertical cavity surface-emitting (SE) laser was measured for the first time. The linewidth measured by a delayed self-homodyne method was 50 MHz at an output power of 1.4 mW under room-temperature CW operation. The linewidth obtained was guite narrow in spite of the short cavity configuration of the SE laser. This narrow linewidth is attributed to the high-reflectivity mirrors. The measured linewidth is in good agreement with theoretical values.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; spectral line breadth; 1.4 mW; AlGaAs-GaAs; delayed self-homodyne method; high-reflectivity mirrors; room-temperature CW operation; semiconductor lasers; short cavity configuration; spectral linewidth; surface-emitting laser; vertical cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890965
