InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy

Author

Michel, E. ; Xu, J. ; Kim, J.D. ; Ferguson, I. ; Razeghi, M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

Volume

8

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

673

Lastpage

675

Abstract

The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-in Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsitivity at 4 μm is about 1.0×10³ V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8×10/sup 10/ cm/spl middot/Hz¹2//W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPAs) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA´s in the future.

Keywords

III-V semiconductors; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; 4 micron; InSb; InSb infrared photodetectors; Johnson-noise-limited detectivity; Si; Si substrates; detector arrays; electrical analysis; heteroepitaxial growth; molecular beam epitaxy; monolithic focal plane arrays; optical analysis; structural analysis; voltage responsitivity; Detectors; Gallium arsenide; Molecular beam epitaxial growth; Optical materials; Photodetectors; Sensor arrays; Silicon; Substrates; Temperature; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.491591

Filename

491591