DocumentCode :
858874
Title :
A result of general validity for abrut p-i and n-i junctions
Author :
Nicolet, M.-A.
Volume :
51
Issue :
12
fYear :
1963
Firstpage :
1789
Lastpage :
1789
Keywords :
Charge carriers; Differential equations; Distributed parameter circuits; Doping; Electrostatics; Ionization; Semiconductor impurities; Semiconductor process modeling; Space charge; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.2717
Filename :
1444647
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=858874
