• DocumentCode
    859014
  • Title

    Small-signal impedance of GaAs-AlxGa1-xAs resonant tunnelling heterostructures at microwave frequency

  • Author

    Lippens, Didier ; Mounaix, Patrick

  • Author_Institution
    Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´Ascq
  • Volume
    24
  • Issue
    18
  • fYear
    1988
  • fDate
    9/1/1988 12:00:00 AM
  • Firstpage
    1180
  • Lastpage
    1181
  • Abstract
    The microwave impedance of high current drivability GaAs-Alx Ga1-xAs resonant tunnelling heterostructures in negative differential resistance conditions is measured. Using an equivalent circuit model that accounts for the frequency variation of the impedance, circuit elements corresponding to physical phenomena present in the device are identified
  • Keywords
    III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; semiconductor device models; semiconductor junctions; solid-state microwave devices; tunnel diodes; GaAs-AlxGa1-xAs; SHF; circuit elements; equivalent circuit model; frequency variation; high current drivability; microwave frequency; microwave impedance; negative differential resistance; resonant tunnelling heterostructures; tunnel diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    19620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=859014