DocumentCode :
859156
Title :
Millimetre-wave active probe frequency-multiplier for on-wafer characterisation of GaAs devices and ICs
Author :
Majidi-Ahy, R. ; Bloom, D.M.
Author_Institution :
Stanford Univ., CA, USA
Volume :
25
Issue :
1
fYear :
1989
Firstpage :
6
Lastpage :
8
Abstract :
A millimetre-wave active probe quintupler with an output frequency range of 60 to 100 GHz has been developed. The frequency multiplier circuit was implemented in a coplanar waveguide. Using this probe along with the electro-optic sampling technique, on-wafer millimetre-wave vector measurement up to 100 GHz and time-waveform measurement at 77 GHz of test structures on a GaAs substrate have been demonstrated.
Keywords :
III-V semiconductors; MMIC; frequency multipliers; gallium arsenide; integrated circuit testing; probes; 60 to 100 GHz; EHF; GaAs ICs; GaAs devices; MM-waves; coplanar waveguide; electro-optic sampling technique; frequency multiplier circuit; millimetre-wave active probe quintupler; on-wafer characterisation; on-wafer millimetre-wave vector measurement; output frequency range; test structures; time-waveform measurement;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890005
Filename :
19632
Link To Document :
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