DocumentCode
85956
Title
Optical Modeling of Alkaline Saw-Damage-Etched Rear Surfaces of Monocrystalline Silicon Solar Cells
Author
Zhe Liu ; Sahraei, Nasim ; Hoex, B. ; Aberle, Armin G. ; Peters, Ian Marius
Author_Institution
Solar Energy Res. Inst. of Singapore, Nat. Univ. of Singapore, Singapore, Singapore
Volume
4
Issue
6
fYear
2014
fDate
Nov. 2014
Firstpage
1436
Lastpage
1444
Abstract
In this study, we propose a geometric optical model to represent alkaline saw-damage-etched (SDE) surfaces of monocrystalline silicon wafers. An experimental study is carried out to characterize the optical properties of alkaline SDE surfaces on monocrystalline silicon wafers. Based on the surface characteristics measured by goniometry and height profiling, a geometric optical model is developed to describe the SDE surface with two parameters: characteristic angle and planar fraction. Using the path-tracing method, spectral reflectance simulations are carried out for four different types of samples. With the measured characteristic angle of 22° and planar fraction of 0.25 or 0.36, we find that this representation of SDE surface can predict the reflection and transmission with a root-mean-square error (RMSE) of the equivalent current density from 0.19 to 0.57 mA/cm2. The developed model is also applied to the optical loss analysis of aluminum local back surface field (Al-LBSF) solar cells with an SDE rear surface. We find that SDE rear surfaces provide better light trapping than planar surfaces. As a consequence, Al-LBSF solar cells with pyramids on the front and an SDE rear are predicted to produce 0.6 mA/cm 2 more photocurrent than similar cells with a planar rear surface.
Keywords
current density; elemental semiconductors; etching; geometrical optics; optical losses; radiation pressure; reflectivity; silicon; solar cells; Si; alkaline saw-damage-etched rear surfaces; aluminum local back-surface field solar cells; characteristic angle; equivalent current density; geometric optical model; goniometry; height profiling; light trapping; monocrystalline silicon solar cells; monocrystalline silicon wafers; optical loss analysis; optical properties; path-tracing method; photocurrent; planar fraction; reflection; root-mean-square error; spectral reflectance simulations; surface properties; transmission; Geometrical optics; Photovoltaic cells; Semiconductor device modeling; Silicon; Surface treatment; Alkaline saw damage etching; optical modeling; silicon wafer solar cells; textured silicon surfaces;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2014.2349657
Filename
6910241
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