DocumentCode
859957
Title
High power and low optical feedback noise AlGaAs single quantum well lasers
Author
Nido, M. ; Endo, Kazuhiro ; Ishikawa, Seiichiro ; Uchida, M. ; Komazaki, I. ; Hara, Kentaro ; Yuasa, Takeshi
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Kanagawa, Japan
Volume
25
Issue
4
fYear
1989
Firstpage
277
Lastpage
278
Abstract
GaAs-AlGaAs single quantum well self-aligned lasers have been developed for optical disc recording. The lasers emitting at 834 nm have realised low optical feedback noise as well as high output power. The lasers have shown less than -130 dB/Hz relative intensity noise at 3 mW, and stable 50 mW operation (over 500 hours at 50 degrees C ambient).
Keywords
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; laser transitions; semiconductor junction lasers; semiconductor quantum wells; 3 to 50 mW; 834 nm; GaAs-AlGaAs; III-V semiconductors; high output power; low optical feedback noise; optical disc recording; self-aligned lasers; semiconductor lasers; single quantum well lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890192
Filename
19709
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